Experimental analysis and new modeling of MOS LSI yield associated with the number of elements
- 1 February 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 17 (1) , 28-33
- https://doi.org/10.1109/jssc.1982.1051681
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Yield Model for Productivity Optimization of VLSI Memory Chips with Redundancy and Partially Good ProductIBM Journal of Research and Development, 1980
- LSI Yield Modeling and Process MonitoringIBM Journal of Research and Development, 1976
- Applying a composite model to the IC yield problemIEEE Journal of Solid-State Circuits, 1974