Siucon-on-sapphire device photoconduction predictions

• 1 December 1974
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
• Vol. 21  (6) , 217-220
• https://doi.org/10.1109/TNS.1974.6498931

Abstract

Keywords

• MODEL
• PHOTOCONDUCTION
• GATE WIDTH
• RATE EFFECTS
• OPTIMUM VALUES
• CMOS/SOS INVERTERS
• PHOTOCONDUCTANCE APPROXIMATION
• RATE FAILURE
• LINEAR SAPPHIRE