Electroabsorption modulation in strained piezoelectricInGaAs/InP multiquantum wells operating at λ ≃ 1.55 µm
- 29 September 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (20) , 1707-1708
- https://doi.org/10.1049/el:19941173
Abstract
An investigation of absorption modulation using strained piezoelectric InGaAs/InP multiquantum wells grown on (111)B InP substrates is presented. Strong excitonic features are observed in the room temperature photocurrent spectra for a structure with 50 Å quantum wells under 0.6% compressive strain. The application of a reverse bias results in a large blue-shift of the absorption edge of up to 8 nm/V.Keywords
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