TWTA Linearize Using Dual-Gate MESFET

23 March 2005

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 314-315
https://doi.org/10.1109/mwsym.1984.1131776

Abstract

This paper presents a new predistortion technique using GaAs dual-gate MESFETs to linearize the microwave power amplifiers. The results of a linearized 16-watt traveling wave tube amplifier at 12 GHz are presented. The linearize affects a 12 dB reduction in this third-order intermodulation products at 2.5 dB input power back off.

Keywords

MESFETS
FETS
MICROWAVE AMPLIFIERS
CIRCUITS
PREDISTORTION
HIGH POWER AMPLIFIERS
POWER AMPLIFIERS
PHASE DISTORTION
POWER GENERATION
ATTENUATORS

This publication has 2 references indexed in Scilit:

An Automatically Controlled Predistorter for Multilevel Quadrature Amplitude Modulation
IEEE Transactions on Communications, 1983
Impact of a New TWTA Linearizer Upon QPSK/TDMA Transmission Performance
IEEE Journal on Selected Areas in Communications, 1983