L- and S-band 50-watt power GaAs MESFETs

23 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2 (0149645X) , 539-542
https://doi.org/10.1109/mwsym.1996.510991

Abstract

L- and S-band high power GaAs FETs have been developed. At 1.8 GHz, the FET delivers an output power at 1 dB gain-compression point of 42.7 W (46.3 dBm) with 13.3 dB gain and 42% power-added efficiency, and a saturated output power of 51.3 W (47.1 dBm). The developed FETs will contribute to improve the performance of microwave SSPAs used in various radar and communication systems which require higher output power and low distortion.

Keywords

GALLIUM ARSENIDE
MESFETS
POWER GENERATION
MICROWAVE FETS
GAIN
RADAR
SOLID STATE CIRCUITS
FABRICATION
THERMAL RESISTANCE
MICROWAVE DEVICES

This publication has 1 reference indexed in Scilit:

Step-recessed gate GaAs FETs with an undoped surface layer
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002