A method for improved short-wavelength response in hydrogenated amorphous silicon-based solar cells

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Abstract
Amorphous silicon p-i-n devices show a diminished short-wavelength response as the boron concentration of the p-layer increases. A reactive flush with NF3 between p- and i-layer deposition improves the short-wavelength response. Secondary ion mass spectroscopy profiles, however, do not reveal a significant boron tail into the i layer as anticipated suggesting that excess boron in the p layer is associated with interface recombination and is responsible for the effect.