Photoconductive response times of InGaAs/InAlAs multiquantum well waveguide modulators

2 September 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (18) , 1626-1628
https://doi.org/10.1049/el:19931083

Abstract

The pulsed photoconductive response times of 10 and 25 well InGaAs/InAlAs quantum well waveguide modulators are investigated. In both devices comparable sweep-out times for electrons and holes and significant reduction in internal quantum efficiency for fields 200 kV/cm.

Keywords

MQW
HOLES
ELECTRONS
WAVEGUIDE MODULATORS
SEQUENTIAL TUNNELLING
SWEEP-OUT TIMES
CARRIER RECAPTURE
PULSED PHOTOCONDUCTIVE RESPONSE TIMES
MULTIQUANTUM WELL
QUANTUM WELL NUMBER
INTERNAL QUANTUM EFFICIENCY
INGAAS-INALAS
BIAS VOLTAGE