Temperature dependence of radiation damage in silicon
- 1 March 1966
- journal article
- Published by Elsevier in Physics Letters
- Vol. 20 (4) , 344-346
- https://doi.org/10.1016/0031-9163(66)90731-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Anisotropy of defect formation in radiated siliconPhysics Letters, 1965
- Hall Effect Measurement of Radiation Damage and Annealing in SiJournal of the Physics Society Japan, 1964