Direct-write metallization of Silicon MOSFET's using laser photodeposition
- 1 June 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (6) , 164-166
- https://doi.org/10.1109/EDL.1982.25523
Abstract
Gate electrodes of enhancement-mode silicon MOSFET's have been written directly using a new, mask-free laser photodeposition technique. Transistor transconductances and threshold voltages were systematically tuned by varying the gate geometry with the laser beam. The new metallization process is potentially useful for tuning and optimizing the characteristics of individual devices in integrated circuits.Keywords
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