Influence of PF6 dopant concentration on the x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy spectra of poly 3-methylthiophene

1 May 1988

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 6 (3) , 954-959
https://doi.org/10.1116/1.575038

Abstract

X‐ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy techniques have been used to characterize electrochemically grown conductive films of poly (3‐methylthiophene) in the PF₆ doped and undoped states. The PF₆ dopant concentration was varied between the undoped and fully doped states. Core‐level and valence‐level spectra have yielded information on the nature of the polymeric cation and its associated PF₆ anion, as well as structural disorder effects in these polymers. Results have revealed that addition of the PF₆ counterion causes structural disorder within the polymer and that the PF₆ counterion interacts with the highest occupied nonbonding lone‐pair orbital, as well as causing shifts in the photoelectric threshold which may indicate the formation of bipolaron bands.

Keywords

This publication has 0 references indexed in Scilit: