’’F-etched a-SI films’’
- 1 January 1981
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 73 (1) , 15-19
- https://doi.org/10.1063/1.33067
Abstract
A model which suggests that a‐Si films deposited from (SiF4+H2) mixtures are subjected to strong ionic etching during growth is proposed. It is shown that many of the properties of these a‐Si films, such as high conductivity in doped layers and growth, H incorporation, and bandgap data, can be explained by this model. High conductivities are achieved without any detectable F in the film.Keywords
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