Successive oxidation stages and annealing behavior of the Si(111) 7×7 surface observed with scanning tunneling microscopy and scanning tunneling spectroscopy
- 1 March 1991
- journal article
- research article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 9 (2) , 775-778
- https://doi.org/10.1116/1.585509
Abstract
Scanning tunneling microscopy and spectroscopy reveal at least a two‐stage reaction process which occurs at adatom sites on Si (111) 7×7 surfaces exposed to oxygen at 300 K. Reacted adatoms in the first stage have a slightly modified electronic spectrum and show a preference for the faulted half and the corners of the 7×7 unit cell, while second stage adatoms appear similar to ‘‘missing’’ or ‘‘lowered’’ adatoms in topographic images. Annealing the surface to ∼625 K causes large changes in the number and site preference of the two stages.This publication has 0 references indexed in Scilit: