Low-temperature radiation damage studies in silicon by hopping conductance
- 20 September 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (26) , 3701-3709
- https://doi.org/10.1088/0022-3719/14/26/008
Abstract
Radiation damage studies at low temperatures are described, based on measurements of capacitance and dielectric loss on thin specimens with gold electrodes. Results on electron irradiated n- and p-type silicon are discussed in the light of known defect and impurity behaviour, and damage rates are evaluated for specimens of different impurity content.Keywords
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