Fundamental absorption edge in the semiconductor CdInGaS4at high temperatures
- 14 April 1985
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 18 (4) , 747-751
- https://doi.org/10.1088/0022-3727/18/4/019
Abstract
The optical absorption of CdInGaS4 single crystals has been measured in the 2.0-3.0 eV photon energy range and at temperatures from 300K to 800K. The interband gap for the indirect allowed transition was found to have a thermal coefficient, dEg/dT, of -8.0*10-4eV K-1. The preliminary calculations suggest that the electron-phonon interaction is dominant in the temperature dependence of the energy gap in this material.Keywords
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