Frequency-modulation characteristics of semiconductor lasers: deviation from theoretical prediction by rate equation analysis
- 3 July 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (14) , 741-742
- https://doi.org/10.1049/el:19860510
Abstract
The frequency modulation characteristics of 1.3 μm InGaAsP DFB BH lasers are measured when the bias current is slightly modulated by a sinusoidal waveform. Two deviations from the prediction by the rate equations are observed. One is that the phase difference between the frequency deviation and the modulation current approaches 180° below the relaxation resonance, and the other is that the ratio of the frequency modulation index to the amplitude modulation index has a strong frequency dependence. Both of the results are well explained by the two-section model, in which the inhomogeneous distribution of the spectral width enhancement factor α is assumed.Keywords
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