Supression of drain conductance transients, drain current oscillations, and low-frequency generation—Recombination noise in GaAs FET's using buried channels

Abstract
The drain conductance transients of buried-channel MESFET's fabricated on GaAs are compared with conductance transients of regular MESFET's. The buried-channel MESFET's are shown to be essentially free of drain transients in comparison to the regularly fabricated MESFET's. In addition, the buried-channel FET's are shown to be free of oscillations in the drain current, which have been found in FET's manufactured by common techniques.