Effect of junction curvature on breakdown voltage in semiconductors
- 1 September 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (9) , 831-845
- https://doi.org/10.1016/0038-1101(66)90033-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- Charge Multiplication in GaP p-n JunctionsJournal of Applied Physics, 1965
- Breakdown voltages of germanium plane-cylindrical junctionsIEEE Transactions on Electron Devices, 1965
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Avalanche Breakdown in GermaniumPhysical Review B, 1955
- DC Field Distribution in a “Swept Intrinsic” Semiconductor ConfigurationBell System Technical Journal, 1953