Optical study of InP etched in methane-based plasmas by reactive ion beam etching
- 1 February 1996
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 11 (2) , 238-242
- https://doi.org/10.1088/0268-1242/11/2/016
Abstract
We present an optical characterization of the effect of reactive ion beam etching on InP using a plasma of generated by electron cyclotron resonance discharges. We have studied both semi-insulating (Fe-doped) and -type material (Sn-doped). Raman scattering and photoreflectance have been used to study the evolution of the lattice disruption and the surface electric field as a function of the ion beam voltage, which was varied in the range from 100 V to 600 V. Results indicate that the optimum etching conditions are obtained for an ion beam voltage of about 300 V due to the better relationship between disturbance of the crystal lattice and the etch rate.Keywords
This publication has 15 references indexed in Scilit:
- Reactive Ion Beam Etching of Indium Phosphide in Electron Cyclotron Resonance Plasma Using Methane/Hydrogen/Nitrogen MixturesJapanese Journal of Applied Physics, 1994
- Structural modification in reactive-ion-etched i-InP and n+-InP studied by Raman scatteringJournal of Applied Physics, 1993
- Optical studies of direct modulation doping and quantum wire formation by focused Si on beam implantationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- I n s i t u photoreflectance study of the effects of sputter/annealing on the Fermi level at (001) n- and p-type GaAs surfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Reactive ion etching of InP and its optical assessmentPublished by SPIE-Intl Soc Optical Eng ,1991
- Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance dischargesJournal of Vacuum Science & Technology B, 1990
- Reactive Ion-Beam Etching of InP with Cl2Japanese Journal of Applied Physics, 1990
- Electrical and structural changes in the near surface of reactively ion etched InPApplied Physics Letters, 1989
- Dependence of exciton reflectance on field and other surface characteristics: The case of InPPhysical Review B, 1974
- Third-derivative modulation spectroscopy with low-field electroreflectanceSurface Science, 1973