Measurement of Carrier Lifetimes in Germanium and Silicon
- 1 February 1955
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 26 (2) , 190-195
- https://doi.org/10.1063/1.1721958
Abstract
The decay of photoconductivity has been used to measure the lifetime of excess carriers in rectangular samples of germanium and silicon. The sample is illuminated by a short pulse of light and the sample lifetime obtained from an oscilloscope display of the decay of photoconductivity. Analysis of the solution of the diffusion equation yields methods of measuring the bulk lifetime, the surface recombination velocity, and the diffusion constant.This publication has 4 references indexed in Scilit:
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- Recombination Rate in Germanium by Observation of Pulsed Reverse CharacteristicPhysical Review B, 1953
- Temporary Traps in Silicon and GermaniumPhysical Review B, 1953
- The Mobility and Life of Injected Holes and Electrons in GermaniumPhysical Review B, 1951