The nature of the charged-self-interstitial in silicon

Publisher Website
Google Scholar
Abstract
The authors have calculated the total energy of the self-interstitial in silicon at five different interstitial sites and configurations for each of the five charge interstitial states. The energy profile for the self-interstitial at each charge state is then plotted and the nature of diffusion of the self-interstitial is than deduced. The Bourgoin-Corbett mechanism for interstitial motion is demonstrated in p-Si but is not likely in n-Si. The diffusion of the interstitial is found to be long range. The investigation not only supplements the earlier work of Masri et al. but also complements the work of Bar-Yam and Joannopoulos and Car et al.