Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices

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Abstract
We demonstrate the improvement of an indiumtin oxide anode contact to an organic light emitting device via oxygen plasma treatment. Enhanced hole-injection efficiency improves dramatically the performance of single-layer doped-polymer devices: the drive voltage drops from >20 to <10 V, the external electroluminescence quantum efficiency (backside emission only) increases by a factor of 4 (from 0.28% to 1%), a much higher drive current can be applied to achieve a much higher brightness (maximum brightness ∼10,000 cd/m 2 at 1000 mA/cm 2 ), and the forward-to-reverse bias rectification ratio increases by orders of magnitude (from 10 2 to 10 6 –10 7 ). The lifetime of the device is also enhanced by two orders of magnitude.