Some properties of InP lasers

• 1 January 1963
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
• Vol. 51  (8) , 1148-1149
• https://doi.org/10.1109/PROC.1963.2460

Abstract

Keywords

• INDIUM PHOSPHIDE
• GALLIUM ARSENIDE
• STIMULATED EMISSION
• SPONTANEOUS EMISSION
• TEMPERATURE DEPENDENCE
• SEMICONDUCTOR LASERS
• SHAPE
• DENSITY MEASUREMENT
• CURRENT MEASUREMENT
• THRESHOLD CURRENT