Extended data retention characteristics after more than 10/sup 4/ write and erase cycles in EEPROMs
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Degradation of tunnel-oxide floating-gate EEPROM devices and the correlation with high field-current-induced degradation of thin gate oxidesIEEE Transactions on Electron Devices, 1989
- Gate current in OFF-state MOSFETIEEE Electron Device Letters, 1989