Spin-lattice relaxation of116In in InP and InSb in the presence of (n, ?)-induced point defects
- 1 June 1981
- journal article
- Published by Springer Nature in Hyperfine Interactions
- Vol. 10 (1-4) , 765-768
- https://doi.org/10.1007/bf01022007
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Localized defects in III-V semiconductorsPhysical Review B, 1976
- ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2Applied Physics Letters, 1976
- Nuclear quadrupolar spin-lattice relaxation in some III-V compoundsPhysical Review B, 1976