A new aspect of mechanical stress effects in scaled MOS devices
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (4) , 895-900
- https://doi.org/10.1109/16.75220
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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