ac electrical properties and I-V characteristics of MoO3 film under dc bias

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Abstract
The acelectrical properties and the I‐V Δ characteristics of Au–MoO3–Au thin‐film sandwiches were measured under dc voltage bias. The capacitance of the samples is a strong function of the temperature and dc voltage bias. It increases as much as a factor of 20 for a 2900‐Å‐thick sample as the temperature is increased; this variation is reduced with increasing voltage bias. At 325 °K the capacitance is a strong function of the dc voltage bias, decreasing from its zero‐bias value by about 50% at V = 1.5 V. The voltage dependence of the capacitance decreases with decreasing temperature, and at T = 77 °K it is essentially voltage independent. The conductance is also observed to be strongly dependent on temperature and dc voltage bias. For V≲0.6 V , it initially increases strongly with increasing temperature and reaches a maximum value at about 310 °K. With further increase in temperature, it decreases to a minimum value and then increases monotonically. For V ≳0.6 V , the conductance increases monotonically with increasing temperature. The I‐Vcharacteristics under dc bias are essentially thickness independent for V≲0.6 V and thickness dependent for V≳0.6 V . All the results are interpreted in terms of a self‐consistent model that incorporates Schottky barriers at the two metal‐insulator interfaces and a conduction process that exhibits an electrode‐limited to bulk‐limited transition occurring at V ≅ 0.6 V.