Heavily doped GaAs(Be)/GaAlAs HBTs grown by MBE with high device performances and high thermal stability
- 1 April 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (4) , 767-770
- https://doi.org/10.1109/16.127463
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Electrical characterisation of the p-type dopant diffusion of highly doped AlGaAs/GaAs heterojunction bipolar transistors grown by MOCVDElectronics Letters, 1990
- High doping level by rapid thermal annealing of Mg-implanted GaAs/GaAlAs for heterojunction bipolar transistorsIEEE Electron Device Letters, 1987
- Control of Be diffusion in molecular beam epitaxy GaAsApplied Physics Letters, 1985