Epitaxial growth and electrical properties of GaN‐AlN solid solutions
- 1 January 1977
- journal article
- other
- Published by Wiley in Crystal Research and Technology
- Vol. 12 (3) , K18-K20
- https://doi.org/10.1002/crat.19770120316
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- High pressure solution growth of GaNJournal of Crystal Growth, 1975
- Influence of growth conditions on the electrical properties of pyrolytically deposited GaNCrystal Research and Technology, 1975
- Influence of Growth Temperature and Substrate Material on the Properties of Epitaxial GaNCrystal Research and Technology, 1974
- Epitaxially grown AlN and its optical band gapJournal of Applied Physics, 1973
- Luminescence in GaNJournal of Luminescence, 1973
- Vapor epitaxy of gallium nitrideJournal of Crystal Growth, 1972
- Epitaxial growth of aluminum nitrideSolid-State Electronics, 1967