Broadband tunability of gain-flattened quantum well semiconductor lasers with an external grating
- 20 March 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (12) , 1092-1094
- https://doi.org/10.1063/1.100767
Abstract
Quantum well lasers are shown to exhibit flattened broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and applied to a semiconductor quantum well laser with an optimized length of gain region. The predicted very broadband tunability of quantum well lasers is confirmed experimentally by grating-tuning of uncoated lasers over 85 nm, with single longitudinal mode output power exceeding 200 mW.Keywords
This publication has 3 references indexed in Scilit:
- Second quantized state lasing of a current pumped single quantum well laserApplied Physics Letters, 1986
- Broadband operation of coupled-stripe multiple quantum well AlGaAs laser diodesApplied Physics Letters, 1985
- 10 kHz linewidth 1.5 μm InGaAsP external cavity laser with 55 nm tuning rangeElectronics Letters, 1983