Photoconductivity of silicon inversion layers
- 28 November 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (22) , 4539-4544
- https://doi.org/10.1088/0022-3719/10/22/022
Abstract
A type of photoconductivity due to far-infrared light excitation is observed in n-channel inversion layers of Si MOS devices with high mobility. The photosignal is bipolar as a function of gate voltage and has little dependence upon the excitation light between the 337, 220 and 118 mu m laser lines. The photosignal is much stronger than that of inter-sub-band transitions. Shubnikov-de Haas oscillations are seen in the photosignals in a magnetic field and are found to be 180 degrees out of phase from the Shubnikov-de Haas oscillations in the conductivity. These characteristics can be understood in terms of heating of the inversion layer electrons. Photoconductivity due to cyclotron resonance is not observed in these samples.Keywords
This publication has 6 references indexed in Scilit:
- An observation by photoconductivity of strain splitting of shallow bulk donors located near to the surface in silicon mos devicesSolid State Communications, 1976
- Cyclotron resonance of electrons in surface space-charge layers on siliconPhysical Review B, 1976
- A novel voltage tuneable infrared spectrometer-detectorIEEE Transactions on Electron Devices, 1975
- The Anderson transitionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1975
- Cyclotron Resonance of Electrons in an Inversion Layer on SiPhysical Review Letters, 1974
- Transport properties of conduction electrons in n-type inversion layers in (100) surfaces of siliconJournal of Physics and Chemistry of Solids, 1974