Lateral Definition of Monocrystalline GaAs Prepared by Molecular Beam Epitaxy
- 1 July 1980
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 127 (7) , 1562-1567
- https://doi.org/10.1149/1.2129951
Abstract
Using a thermal oxide of for masking, excellent planar structures of monocrystalline and polycrystalline were prepared on substrates by molecular beam epitaxy. Micron‐sized monocrystalline of device quality with sufficient electrical isolation by semi‐insulating polycrystalline regions were obtained. Planar‐type MESFET's were successfully fabricated to confirm the application potential of this technique.Keywords
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