Nanometer-scale thickness control of amorphous silicon using isotropic wet-etching and low loss wire waveguide fabrication with the etched material
- 18 June 2012
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 100 (25) , 251108
- https://doi.org/10.1063/1.4729416
Abstract
Wet-etching with an organic alkaline solution was monitored in situ in semi-real time by optical reflection spectroscopy to achieve high resolution thickness control of hydrogenated amorphous silicon (a-Si:H) film for use in wire waveguides. Isotropic etching resulting from the intrinsic isotropic structure of a-Si:H led to uniform etching with a surface roughness of <1 nm. A moderate etching rate enabled accurate endpoint detection with a resolution of ≤1 nm at room temperature. A wire waveguide made of the etched a-Si:H film had a low propagation loss of 1.2 dB/cm, which was almost equivalent to that of an unetched one.Keywords
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