Surface reactions of trimethylgallium and trimethylarsenic on silicon surfaces

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Abstract
Epitaxy of III–V semiconductor layers from gaseous sources metalorganic chemical vapor depsoition and metalorganic molecular-beam epitaxy is essentially determined by surface reactions of metalorganic components on the semiconductor surface. The present paper deals with the decomposition of trimethylgallium [TMGa=Ga(CH3 )3 ] and trimethylarsenic [TMAs=As(CH3 )3 ] on Si(111) and Si(100) surfaces. High-resolution electron energy-loss spectroscopy (HREELS) is used to identify the adsorbed surface species by means of its vibrational spectrum. Adsorption of TMGa and TMAs is performed at 300 K and the surface reaction, in particular its dependence on temperature is studied by measuring HREELS spectra after each step. A comparison with thermal desorbtion data is given in some cases. TMGa and TMAs exhibit a different decomposition pattern and the reaction of TMAs is dependent on the orientation of the Si surface.

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