Silicon interference filters and Bragg reflectors for active and passive integrated optoelectronic components

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Abstract
Porous silicon (PSi) multilayer structures are used in Si- based optoelectronic devices which exhibit interesting optical and electrical properties. Integration of these structure can be achieved either passively or actively. Passive elements include high reflectivity mirrors and optical filters with a maximum reflectivity peak approximately 100%. The benefit of adding a multilayer mirror below a luminescent PSi film is to reduce the amount of light absorbed by the silicon substrate and increase the light output. Placing two multilayer mirrors in between a highly luminescent PSi film creates an active microcavity resonator structure in which a significant photoluminescence and electroluminescence line narrowing (FWHM less than or equal to 20 nm) is observed. A detailed study on the passive and active roles of PSi multilayer structures is presented in a device configuration.

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