A new MOS image sensor operating in a non-destructive readout mode

1 January 1986

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 353-356
https://doi.org/10.1109/iedm.1986.191190

Abstract

In this paper, a new MOS image sensor, named a "Charge Modulation Device", is presented for the first time. This image sensor is characterized by a non-destructive readout operation and an amplification at each pixel level. A new device structure and circuit configuration, suitable for a high packing density array and high speed operation, are proposed. An image sensor of 210(H) × 165(V) pixels was fabricated and evaluated.

Keywords

IMAGE SENSORS
PIXEL
CHARGE CARRIER PROCESSES
HIGH SPEED OPTICAL TECHNIQUES
OPTICAL MODULATION
OPTICAL SENSORS
PHOTOTRANSISTORS
SOLID STATE CIRCUITS
MOSFETS

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