Self-regulated growth of tilted superlattices by atomic layer epitaxy
- 15 June 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (24) , 3151-3153
- https://doi.org/10.1063/1.121576
Abstract
We report on a self-regulated method for the growth of tilted superlattices. It relies on the reconstructed surfaces alternatively stabilized during the atomic layer epitaxy (ALE) of compound semiconductors. The c(2×2)+(2×1) Cd-stabilized and the (2×1) Te-stabilized surfaces alternatively formed during the ALE of CdTe and CdMn(Mg)Te ensure a self-regulation of the growth at 0.5 monolayer deposited per ALE cycle for both CdTe and CdMn(Mg)Te. We are thus able to overcome the problem of precise flux control inherent to tilted superlattices.Keywords
This publication has 13 references indexed in Scilit:
- Structural and optical properties of CdTe/MnTe tilted superlattices grown on vicinal surfacesJournal of Crystal Growth, 1998
- In-plane atomic ordering in GaAs/AlAs lateral superlattices grown on vicinal surfacesEurophysics Letters, 1997
- Growth of GaInAsP quantum wire heterostructures using the strain-induced lateral-layer ordering processJournal of Crystal Growth, 1997
- Growth of CdTe/MnTe tilted and serpentine lattices on vicinal surfacesApplied Physics Letters, 1997
- Surface stoichiometry determination using reflection high-energy electron diffraction and atomic-layer epitaxy: The case of ZnTe(100)Physical Review B, 1995
- Se-rich phase of ZnSe(100) predicted by total-energy calculationsApplied Physics Letters, 1994
- Self-organized lateral superlattice formation by vertical exchange reactionsSurface Science, 1994
- Lasing from excitons in quantum wiresPhysical Review Letters, 1993
- Stimulated emission in semiconductor quantum wire heterostructuresPhysical Review Letters, 1989
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988