Electrical Resistivity and High-Field Magnetoresistance of Zr-N Film Thermometers

Publisher Website
Google Scholar
Abstract
Temperature and magnetic field dependence of the resistivity of Zr-N sputtered films have been measured. The characteristics of Zr-N film, that they can be divided into two groups by the ratio of the resistance at helium and room temperatures, have been precisely investigated. There are marked differences in both the temperature dependence of resistance and in the magnetoresistance between the two groups. The temperature dependence of magnetoresistance of the films has been discussed within the framework of Anderson localization. The origin of magnetoresistance was also discussed.