Forbidden 200 diffraction spots in silicon
- 1 January 1978
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 37 (1) , 73-81
- https://doi.org/10.1080/13642817808245308
Abstract
The kinematically forbidden 200 spot can frequently be observed in Si near the [001] orientation where it cannot be generated by multiple diffraction with strong Bragg reflections. The multiple scattering effects from spots in higher-order Laue zones close to the Ewald sphere can probably account for the observed intensity even though many cancellation effects occur.Keywords
This publication has 7 references indexed in Scilit:
- Higher order Laue zone effects in electron diffraction and their use in lattice parameter determinationProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1977
- Bloch waves and higher order Laue zone effects in high energy electron diffractionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1976
- Surface structures on thin gold and platinum crystalsThin Solid Films, 1976
- Direct resolution of surface atomic steps by transmission electron microscopyPhilosophical Magazine, 1974
- Some electron diffraction contrast effects at planar defects in crystalsPhilosophical Magazine, 1967
- The extinction rule for reflexions in symmetrical spot patterns of electron diffraction by crystalsActa Crystallographica, 1960
- The scattering of electrons by atoms and crystals. III. Single-crystal diffraction patternsActa Crystallographica, 1959