Microwave Induced Carrier Multiplication in Germanium
- 1 March 1959
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (3) , 443-444
- https://doi.org/10.1063/1.1735188
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- High Electric Field Effects in-Indium AntimonidePhysical Review B, 1958
- Rate Processes and Low-Temperature Electrical Conduction in-Type GermaniumPhysical Review B, 1958
- Measurement of the Hall Mobility in n-Type Germanium at 9121 MegacyclesJournal of Applied Physics, 1958
- Avalanche Multiplication and Electron Mobility in Indium Antimonide at High Electric Fields†Journal of Electronics and Control, 1958
- Impact ionization of impurities in germaniumJournal of Physics and Chemistry of Solids, 1957
- The low temperature electrical conductivity of n-type germaniumJournal of Physics and Chemistry of Solids, 1957
- Minority Carrier Extraction in GermaniumPhysical Review B, 1955
- Directional Properties of the Cyclotron Resonance in GermaniumPhysical Review B, 1954