Material, device, and step independence of the quantized Hall resistance
- 1 April 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 44 (2) , 269-272
- https://doi.org/10.1109/19.377828
Abstract
Peer reviewed: NoNRC publication: YeKeywords
This publication has 11 references indexed in Scilit:
- Improvements in the realization of the quantized Hall resistance standard at OFMETIEEE Transactions on Instrumentation and Measurement, 1995
- Report on a joint BIPM-EUROMET project for the fabrication of QHE samples by the LEPIEEE Transactions on Instrumentation and Measurement, 1993
- The Canadian realization of a quantized Hall resistance standardIEEE Transactions on Instrumentation and Measurement, 1993
- Anomalous behavior of a quantized Hall plateau in a high-mobility Si metal-oxide–semiconductor field-effect transistorPhysical Review B, 1992
- Anomalously offset quantized Hall plateaus in high-mobility Si-MOSFETsSurface Science, 1992
- Low-noise measurements of the quantized hall resistance using an improved cryogenic current comparator bridgeIEEE Transactions on Instrumentation and Measurement, 1991
- Comparison of the quantized hall resistance in different GaAs/Al/sub x/Ga/sub 1-x/As heterostructuresIEEE Transactions on Instrumentation and Measurement, 1991
- Direct comparison of the quantized Hall resistance in gallium arsenide and siliconPhysical Review Letters, 1991
- Recent results of high magnetic field experiments on 2D systems: Localization and quatized hall resistancePhysica B: Condensed Matter, 1990
- Quantized Hall resistance measurementsIEEE Transactions on Instrumentation and Measurement, 1989