Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy
- 15 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 433-436, 415-418
- https://doi.org/10.4028/www.scientific.net/msf.433-436.415
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Electrically active point defects in n-type 4H–SiCJournal of Applied Physics, 1998
- Overlapping electron traps in n-type silicon studied by capacitance transient spectroscopyJournal of Applied Physics, 1989