Cyclotron resonance characterization of ion-implanted carriers in semiconductors
- 1 July 1976
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 13 (4) , 899-902
- https://doi.org/10.1116/1.569016
Abstract
Cyclotron resonance absorption of GaAs substrates implanted with S+ ions has been investigated. Values of the implanted carrier mobility and concentration, deduced from the resonance width and strength or from comparison with model calculations, compared well with the values determined by transport measurements. The cyclotron resonance measurements require no contacts, are unaffected by the presence of a passivation layer, and do not alter the sample in any way. The technique is also applicable to carriers in semiconductor films.Keywords
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