Dislocated Epitaxial Islands
- 6 November 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 85 (19) , 4088-4091
- https://doi.org/10.1103/physrevlett.85.4088
Abstract
Dislocation networks observed in islands grown epitaxially on Si are compared with the results of dislocation-dynamics calculations. The calculations make use of the fact that image forces play a relatively minor role compared to line tension forces and dislocation-dislocation interactions. Remarkable agreement is achieved, demonstrating that this approach can be applied more generally to study dislocations in other mesostructures.
Keywords
This publication has 11 references indexed in Scilit:
- Developing rigorous boundary conditions to simulations of discrete dislocation dynamicsModelling and Simulation in Materials Science and Engineering, 1999
- Image stresses in a free-standing thin filmModelling and Simulation in Materials Science and Engineering, 1999
- Fast-sum method for the elastic field of three-dimensional dislocation ensemblesPhysical Review B, 1999
- Growth kinetics of CoSi2 and Ge islands observed with in situ transmission electron microscopyMicron, 1999
- Simulation of dislocations on the mesoscopic scale. I. Methods and examplesJournal of Applied Physics, 1999
- On plastic deformation and the dynamics of 3D dislocationsInternational Journal of Mechanical Sciences, 1998
- Implementing image stresses in a 3D dislocation simulationModelling and Simulation in Materials Science and Engineering, 1996
- In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I.
Si (001)Ge Surface Science, 1996 - Simulations of forest interactions and strain hardening in FCC crystalsModelling and Simulation in Materials Science and Engineering, 1994
- Investigation of the defect structure of thin single-crystalline CoSi2 (B) films on Si(111) by transmission electron microscopyJournal of Applied Physics, 1993