RADIATIVE RECOMBINATION FROM FIELD-EXCITED HOT CARRIERS IN n-GaAs
- 1 April 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (7) , 280-282
- https://doi.org/10.1063/1.1653196
Abstract
Photoluminescent spectra have been measured in n‐GaAs with applied fields of up to 2100 V cm−1. Hot electron distributions derived from the spectra are compared with drifted Maxwellian distributions having electron temperature equal to the lattice temperature.Keywords
This publication has 4 references indexed in Scilit:
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- Calculation of distribution functions by exploiting the stability of the steady stateJournal of Physics and Chemistry of Solids, 1969
- The electric field dependence of carrier temperature in semiconductorsProceedings of the Physical Society, 1967
- Anisotropy of the energy distribution function of hot holes in germaniumPhysics Letters, 1963