Novel low-resistance ohmic contact to n-type GaAs using Cu3Ge
- 19 December 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (25) , 3245-3247
- https://doi.org/10.1063/1.112426
Abstract
We show that ε1‐Cu3Ge forms a low‐resistance ohmic contact to n‐type GaAs. The ε1‐Cu3Ge contact exhibits a planar and abrupt interface and contact resistivity of 6.5×10−7 Ω cm2 which is considerably lower than that reported for Ge/Pd and AuGeNi contacts on n‐type GaAs with similar doping concentrations (∼1×1017 cm−3). The contact is electrically stable during annealing at temperatures up to 450 °C. We also show that in the Ge/Cu/n‐type GaAs system, the contact remains ohmic over a wide range of Ge concentration that extends from 15 to 40 at. %. n‐channel GaAs metal–semiconductor field‐effect transistors using the ε1‐Cu3Ge ohmic contacts demonstrate a higher transconductance compared to devices with Ge/Pd and AuGeNi contacts.Keywords
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