Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy
- 31 March 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (13) , 1730-1732
- https://doi.org/10.1063/1.118683
Abstract
We have developed a low temperature procedure for molecular beam epitaxy of CdTe buffer layers on {211} Si wafers and have used Si/ZnTe/CdTe composite substrates for molecular beam epitaxy of double layer Hg1−xCdxTe heterostructures. Planar p-on-n double layer heterostructures were formed by an implantation technique and test diodes were fabricated and characterized. At 77 K, devices with 30×30 μm2 junction area had R0A values in the range 1.5×106–1×107Ω cm2 with a uniform cut-off wavelength of 4.65 μm.Keywords
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