Gallium phosphide high-temperature electroluminescent p-n-p-n switches and controlled rectifiers

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Abstract
Electroluminescent gallium phosphide p‐n‐p‐n switches (dynistors) and controlled rectifiers (thyristors) which are operable in the temperature range 0 ≤ T ≤ 500°C have been fabricated by diffusion of Zn into GaP n‐p‐n structures grown by liquid‐phase epitaxy. Gallium phosphide thyristor forward and reverse blocking voltages as large as 280 and 80 V, respectively, have been observed. These thyristors can be switched to the low‐impedance state by the application of < 5 A/cm2 gate current and exhibit holding current densities of ≈ 15 A/cm2 at a forward voltage of 2.2 V. Forward blocking voltages as large as 380 V at room temperature and 310 V at 415°C have been observed for GaP dynistors. When forward biased into the low‐impedance state, these devices operate as high‐brightness light emitters with room‐temperature emission in the green portion of the spectrum.