10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAlAs/InGaAs HEMTs
- 1 July 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (7) , 754-756
- https://doi.org/10.1109/68.145262
Abstract
A long-wavelength monolithically integrated photoreceiver which is capable of operation at a 10-Gb/s NRZ light signal is described. The photoreceiver was fabricated using an Si-planar-doping technique to enhance the uniformity and transconductance of HEMTs and using Be-ion implantation technique. The circuit consists of a p-i-n PD, a transimpedance amplifier, and a buffer stage to provide an output impedance of 50 Omega . The photoreceiver demonstrated a 3-dB down bandwidth of 8 GHz and the responsivity of 158 V/W. The measured input noise current was 20 pA/ square root Hz and the calculated sensitivity at 10-Gb/s NRZ signal was -16.5 dBm. The receiver is the first monolithically integrated p-i-n-HEMT receiver capable of receiving a 10-Gb/s NRZ light signal.Keywords
This publication has 10 references indexed in Scilit:
- An ultra-high-speed optoelectronic integrated receiver for fiber-optic communicationsIEEE Transactions on Electron Devices, 1992
- Monolithically integrated InP-based front-end photoreceiversIEEE Transactions on Electron Devices, 1991
- A 622 Mb/s high-sensitivity monolithic InGaAs-InP pin-FET receiver OEIC employing a cascode preamplifierIEEE Photonics Technology Letters, 1991
- A 622 Mb/s monolithically integrated InGaAs-InP high-sensitivity transimpedance photoreceiver and a multichannel receiver arrayIEEE Photonics Technology Letters, 1991
- High-functionality waveguide/MSM/HEMT integrated receiver prepared by one-step OMCVD growth on patterned InP substratesPublished by Optica Publishing Group ,1991
- 4 Gbit/s pin/HBT monolithic photoreceiverElectronics Letters, 1990
- Excellent uniformity of threshold voltage of Si planar-doped AlInAs/GaInAs heterointerface field-effect transistors grown by metalorganic chemical vapor depositionApplied Physics Letters, 1990
- Monolithically integrated In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As (on InP) MSM/HFET photoreceiver grown by MBEElectronics Letters, 1990
- Delta doping of III–V compound semiconductors: Fundamentals and device applicationsJournal of Vacuum Science & Technology A, 1990
- A 3 GHz transimpedance OEIC receiver for 1.3-1.55 mu m fiber-optic systemsIEEE Photonics Technology Letters, 1990