On the Dodson–Tsao excess stress for glide of a threading dislocation in a strained epitaxial layer
- 15 February 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (4) , 2054-2056
- https://doi.org/10.1063/1.351154
Abstract
The concept of excess stress was originally introduced in a study of elastic strain relaxation in an epitaxial layer grown beyond its critical thickness, where it was proposed as the relevant stress in a kinetic law for dislocation motion. The concept has subsequently been applied in a variety of studies of strain relaxation, but without a standard definition as a basis for quantitative comparisons. The purpose here is to propose a fundamental definition of excess stress as the particular stress measure which is work-conjugate to the Burgers displacement during glide of a threading dislocation in a strained layer. This definition also has the feature of being consistent with definitions of effective stress in kinetic laws of glide in bulk materials.This publication has 7 references indexed in Scilit:
- Strain relaxation kinetics in Si1−xGex/Si heterostructuresJournal of Applied Physics, 1991
- Interpretation of dislocation propagation velocities in strained GexSi1−x/Si(100) heterostructures by the diffusive kink pair modelJournal of Applied Physics, 1991
- A quantitative analysis of strain relaxation by misfit dislocation glide in Si1−xGex/Si heterostructuresJournal of Applied Physics, 1990
- The driving force for glide of a threading dislocation in a strained epitaxial layer on a substrateJournal of the Mechanics and Physics of Solids, 1990
- Excess stress and the stability of strained heterostructuresApplied Physics Letters, 1988
- Relaxation of strained-layer semiconductor structures via plastic flowApplied Physics Letters, 1987
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974