Electric break-through in an inversion layer: Exactly solvable model
- 1 April 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 26 (2) , 69-71
- https://doi.org/10.1016/0038-1098(78)90498-2
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Theory of Valley Splitting in an N-Channel (100) Inversion Layer of Si III. Enhancement of Splittings by Many-Body EffectsJournal of the Physics Society Japan, 1977
- Theory of Valley Splitting in anN-Channel (100) Inversion Layer of Si II. Electric Break ThroughJournal of the Physics Society Japan, 1977
- Theory of Valley Splitting in anN-Channel (100) Inversion Layer of Si I. Formulation by Extended Zone Effective Mass TheoryJournal of the Physics Society Japan, 1977
- High field magnetoconductivity of Si inversion layersSolid State Communications, 1977
- Valley splitting in an n-channel (100) inversion layer on p-type siliconSurface Science, 1976
- Quantum galvanomagnetic properties of n-type inversion layers on Si(100) MOSFETSurface Science, 1976
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Magneto-Oscillatory Conductance in Silicon SurfacesPhysical Review Letters, 1966
- Theory of Donor States in SiliconPhysical Review B, 1955
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955